1987-08-18
1990-01-30
Hille, Rolf
357 2, 357 61, H01L 2348
Patent
active
048977101
ABSTRACT:
The semiconductor device comprises a silicon substrate, a boron-doped high resistant silicon carbide layer that is formed on the silicon substrate and a silicon carbide layer formed on the high resistant silicon carbide layer. The silicon carbide layer that is formed on the high resistant silicon carbide layer provides an electrical insulation for the device so that improved device characteristics are obtained.
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Furukawa Katsuki
Hatano Akitsugu
Suzuki Akira
Uemoto Atsuko
Hille Rolf
Loke Steven H.
Sharp Kabushiki Kaisha
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