Schottky barrier gate type field effect transistor

Details Schottky barrier gate type field effect transistor Schottky barrier gate type field effect transistor

1991-09-25

1993-07-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257280, 257472, 257509, 257744, H01L 2980, H01L 27095, H01L 2900, H01L 2348

Patent

active

052296253

ABSTRACT:
The semiconductor device somprises a silicon substrate, a boron-doped high resistant silicon carbide layer formed on said silicon substrate and a silicon carbide layer formed on said high resistant silicon carbide layer.

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patent: 4170818 (1979-10-01), Tobey, Jr. et al.
patent: 4623425 (1986-11-01), Suzuki et al.
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IBM Technical Disclosure Bulletin, "Integrated semiconductor structure arrangement", Phillips et al, vol. 8, No. 7, Dec. 1985.
Chapter 9 from Semiconductors and Semimetals entitled "Silicon Carbide Junction Devices" by Albert C. Beer, vol. 7; pp. 625-683.
Articles from J. Appl. Phys. Oct. 15, 1986 entitled "Schottky-Barrier Field-Effect Transistors of 3C-SiC", Daimon et al., pp. 2989 to 2991.
"A New Doping Method Using Metalorganics in Chemical Vapor Deposition 6H-SiC" by S. Yoshida et al., Journal of Applied Physics 55 (1), Jan. 1, 1984 pp. 169-171.
"High Temperature Electrical Properties of 3C-SiC Epitaxial Layers Grown By Chemical Vapor Deposition" by K. Sasaki et al., Applied Physics Letters 45 (1) Jul. 1, 1984, pp. 72-73.

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