4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Specified wide band gap semiconductor material other than...

Anant K. Agarwal

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Aluminum gallium nitride based heterojunction bipolar transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Patent

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Aluminum gallium nitride heterojunction bipolar transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent

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High voltage silicon carbide devices having bi-directional...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate

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High voltage silicon carbide devices having bi-directional...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate

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High voltage silicon carbide MOS-bipolar devices having...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate

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Profile ID: LFUS-PAI-P-293987

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