Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2005-05-18
2008-08-19
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S329000, C257S339000
Reexamination Certificate
active
07414268
ABSTRACT:
Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.
REFERENCES:
patent: 3629011 (1971-12-01), Tohi et al.
patent: 4466172 (1984-08-01), Batra
patent: 4779126 (1988-10-01), Herman
patent: 4811065 (1989-03-01), Cogan
patent: 5021854 (1991-06-01), Huth
patent: 5111253 (1992-05-01), Korman et al.
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5184199 (1993-02-01), Fujii et al.
patent: 5264713 (1993-11-01), Palmour
patent: 5270554 (1993-12-01), Palmour
patent: 5313092 (1994-05-01), Tsuruta et al.
patent: 5348895 (1994-09-01), Smayling et al.
patent: 5384270 (1995-01-01), Ueno
patent: 5385855 (1995-01-01), Brown et al.
patent: 5393999 (1995-02-01), Malhi
patent: 5396085 (1995-03-01), Baliga
patent: 5506421 (1996-04-01), Palmour
patent: 5510281 (1996-04-01), Ghezzo et al.
patent: 5510630 (1996-04-01), Agarwal
patent: 5539217 (1996-07-01), Edmond et al.
patent: 5629531 (1997-05-01), Palmour
patent: 5663580 (1997-09-01), Harris et al.
patent: 5710059 (1998-01-01), Rottner
patent: 5712502 (1998-01-01), Mitlehner et al.
patent: 5726463 (1998-03-01), Brown et al.
patent: 5734180 (1998-03-01), Malhi
patent: 5763905 (1998-06-01), Harris
patent: 5804483 (1998-09-01), Harris
patent: 5814859 (1998-09-01), Ghezzo et al.
patent: 5831288 (1998-11-01), Singh et al.
patent: 5837572 (1998-11-01), Gardner et al.
patent: 5851908 (1998-12-01), Harris et al.
patent: 5877041 (1999-03-01), Fuller
patent: 5917203 (1999-06-01), Bhatnagar et al.
patent: 5972801 (1999-10-01), Lipkin et al.
patent: 5976936 (1999-11-01), Miyajima et al.
patent: 6020600 (2000-02-01), Miyajima et al.
patent: 6025233 (2000-02-01), Terasawa
patent: 6025608 (2000-02-01), Harris et al.
patent: 6054352 (2000-04-01), Ueno
patent: 6096607 (2000-08-01), Ueno
patent: 6100169 (2000-08-01), Suvorov et al.
patent: 6107142 (2000-08-01), Suvorov et al.
patent: 6117735 (2000-09-01), Ueno
patent: 6121633 (2000-09-01), Singh et al.
patent: 6133587 (2000-10-01), Takeuchi et al.
patent: 6162665 (2000-12-01), Zommer
patent: 6165822 (2000-12-01), Okuno et al.
patent: 6180958 (2001-01-01), Cooper, Jr.
patent: 6204135 (2001-03-01), Peters et al.
patent: 6221700 (2001-04-01), Okuno et al.
patent: 6228720 (2001-05-01), Kitabatake et al.
patent: 6238967 (2001-05-01), Shiho et al.
patent: 6239463 (2001-05-01), Williams et al.
patent: 6246076 (2001-06-01), Lipkin et al.
patent: 6297100 (2001-10-01), Kumar et al.
patent: 6303508 (2001-10-01), Alok
patent: 6316791 (2001-11-01), Schorner et al.
patent: 6344663 (2002-02-01), Slater, Jr. et al.
patent: 6399996 (2002-06-01), Chang et al.
patent: 6420225 (2002-07-01), Chang et al.
patent: 6429041 (2002-08-01), Ryu et al.
patent: 6448160 (2002-09-01), Chang et al.
patent: 6455892 (2002-09-01), Okuno
patent: 6551865 (2003-04-01), Kumar et al.
patent: 6573534 (2003-06-01), Kumar et al.
patent: 6593620 (2003-07-01), Hshieh et al.
patent: 6610366 (2003-08-01), Lipkin
patent: 6653659 (2003-11-01), Ryu et al.
patent: 6759684 (2004-07-01), Fukuda et al.
patent: 6767843 (2004-07-01), Lipkin et al.
patent: 6974720 (2005-12-01), Sumakeris et al.
patent: 2001/0017374 (2001-08-01), Carter et al.
patent: 2002/0038891 (2002-04-01), Ryu et al.
patent: 2002/0047125 (2002-04-01), Fukuda et al.
patent: 2002/0102358 (2002-08-01), Das et al.
patent: 2003/0079676 (2003-05-01), Ellison et al.
patent: 2004/0101625 (2004-05-01), Das et al.
patent: 2004/0119076 (2004-06-01), Ryu
patent: 2004/0211980 (2004-10-01), Ryu
patent: 2004/0212011 (2004-10-01), Ryu
patent: 2004/0216661 (2004-11-01), Kordina
patent: 2004/0222501 (2004-11-01), Kordina
patent: 2005/0000406 (2005-01-01), Janzen et al.
patent: 2005/0029557 (2005-02-01), Hatakeyama et al.
patent: 2005/0082542 (2005-04-01), Sumakeris et al.
patent: 2006/0194400 (2006-08-01), Cooper et al.
patent: 19809554 (1998-09-01), None
patent: 19832329 (1999-02-01), None
patent: 19900171 (1999-07-01), None
patent: 10036208 (2002-02-01), None
patent: 0 637 069 (1995-02-01), None
patent: 1 204 145 (2002-05-01), None
patent: 1 058 317 (2002-12-01), None
patent: 01117363 (1985-05-01), None
patent: 03034466 (1991-02-01), None
patent: 03157974 (1991-07-01), None
patent: 08264766 (1996-10-01), None
patent: 09205202 (1997-08-01), None
patent: 11191559 (1999-07-01), None
patent: 11238742 (1999-08-01), None
patent: 11261061 (1999-09-01), None
patent: 11266017 (1999-09-01), None
patent: 11274487 (1999-10-01), None
patent: 2000049167 (2000-02-01), None
patent: 2000082812 (2000-03-01), None
patent: 2000106371 (2000-04-01), None
patent: 2001185727 (2001-07-01), None
patent: WO 97/08754 (1997-03-01), None
patent: WO 97/39485 (1997-10-01), None
patent: WO 98/02916 (1998-01-01), None
patent: WO 98/02924 (1998-01-01), None
patent: WO 00/13236 (2000-03-01), None
patent: WO2004/020706 (2004-03-01), None
A.K. Agarwal, J.B. Casady, L.B. Rowland, W.F. Valek, and C.D. Brandt, “1400 V 4H-SiC Power MOSFET's,” Materials Science Forum vols. 264-268, pp. 989-992, 1998.
A.K. Agarwal, J.B. Casady, L.B. Rowland, W.F. Valek, M.H. White, and C.D. Brandt, “1.1 kV 4H-SiC Power UMOSFET's,”IEEE Electron Device Letters, vol. 18, No. 12, pp. 586-588, Dec. 1997.
A.K. Agarwal, N.S. Saks, S.S. Mani, V.S. Hegde and P.A. Sanger, “Investigation of Lateral RESURF, 6H-SiC MOSFETs,”Material Science Forum, vols. 338-342, pp. 1307-1310, 2000.
A.K. Agarwal, S. Seshadri, and L.B. Rowland, “Temperature Dependence of Fowler-Nordheim Current in 6H-and 4H-Sic Mos Capacitors,”IEEE Electron Device Letters, vol. 18, No. 12, Dec. 1997, pp. 592-594.
A.V. Suvorov, L.A. Lipkin, G.M. Johnson, R. Singh and J.W. Palmour, “4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs,”Material Science Forumvols. 338-342, pp. 1275-1278, 2000.
Agarwal et al. “A Critical Look at the Performance Advantages and Limitations of 4H-SiC Power UMOSFET Structures,”1996 IEEE ISPSD and IC's Proc., May 20-23, 1996, pp. 119-122.
Baliga, Power Semiconductor Devices, Chapter 7, PWS Publishing, 1996.
Bharnagar et al. “Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices,”IEEE Transactions on Electron Devices, vol. 40, No. 3, Mar. 1993, pp. 645-655.
Capano, M.A., et al., Ionization Energies and Electron Mobilities in Phosphorus—and Nitrogen-Implanted 4H-Silicon Carbide, IEEE ICSCRAM Conference 1999, Research Triangle Park, North Carilona (Oct. 10-13, 1999).
D. Alok, E. Arnold, and R. Egloff, “Process Dependence of Inversion Layer Mobility in 4H-SiC Devices,”Materials Science Forum, vols. 338-342, pp. 1077-1080, 2000.
Das, Mrinal K. Graduate thesis entitled,Fundamental Studies of the Silicon Carbide MOS Structure, Purdue University, 1999.
Dastidar, Sujoyita, A Study of P-Type Activation in Silicon Carbide, Thesis (Purdue University, May 1998).
Fukuda et al. “Improvement of SiO2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing,”Jpn. J. Appl. Phys.vol. 38, Apr. 1999, pp. 2306-2309.
G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, M. Di Ventra, S.T. Pantelides, L.C. Feldman, and R.A. Weller, “Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide,”Applied Physics Letters, vol. 76, No. 13, pp. 1713-1715, Mar. 2000.
G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, and J.W. Palmour, “Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide,”IEEE Electron Device Letters, vol. 22, No. 4, Apr. 2001.
J. Tan, J.A. Cooper, Jr., and Mr. R. Melloch, “High-Voltage Accumulation-Layer UMOSFETs in 4H-SiC,”IEEE Electron Device Letters, vol. 19, No. 12, pp. 487-489, Dec. 1998.
J.B. Casady, A.K. Agarwal, L.B. Rowland, W.F. Valek, and C.D. Bran
Agarwal Anant K.
Das Mrinal K.
Hobgood Hudson McDonald
Jenny Jason R.
Palmour John W.
Cree Inc.
Hu Shouxiang
Myers Bigel & Sibley & Sajovec
LandOfFree
High voltage silicon carbide MOS-bipolar devices having... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage silicon carbide MOS-bipolar devices having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage silicon carbide MOS-bipolar devices having... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3998110