Aluminum gallium nitride based heterojunction bipolar transistor

Details Aluminum gallium nitride based heterojunction bipolar transistor Aluminum gallium nitride based heterojunction bipolar transistor

1995-11-09

1997-06-24

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257198, 257625, H01L 2926

Patent

active

056419759

ABSTRACT:
A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.

REFERENCES:
patent: 4985742 (1991-01-01), Pankove
patent: 5010382 (1991-04-01), Katoh
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5326992 (1994-07-01), Yoder
patent: 5378921 (1995-01-01), Ueda
patent: 5408120 (1995-04-01), Manabe et al.
"New Transistors Take the Heat", Machine Design, Aug. 10, 1995; p. 36.
"High-Temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain", J. Pankove et al., Dec. 1994 IEEE; pp. 15.6.1-15.6.4.

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