Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2005-06-23
2009-11-10
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S128000, C257SE27052, C257SE29115, C257SE29215
Reexamination Certificate
active
07615801
ABSTRACT:
High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.
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Agarwal Anant K.
Das Mrinal K.
Hobgood Hudson McDonald
Jenny Jason R.
Palmour John W.
Cree Inc.
Myers Bigel & Sibley & Sajovec
Wilson Allan R.
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