Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-02-05
1999-07-13
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257 76, H01L 29737
Patent
active
059230584
ABSTRACT:
A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.
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Agarwal Anant K.
Driver Michael C.
Messham Rowan L.
Guay John
Northrop Grumman Corporation
Sutcliff Walter G.
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