4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Specified wide band gap semiconductor material other than...
  6. Diamond or silicon carbide

Albert Augustus Burk, Jr.

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Minimizing degradation of SiC bipolar semiconductor devices

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Minimizing degradation of SiC bipolar semiconductor devices

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Minimizing degradation of SiC bipolar semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate

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Nitride semiconductor structures with interlayer structures

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2873090

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