Minimizing degradation of SiC bipolar semiconductor devices

Details Minimizing degradation of SiC bipolar semiconductor devices Minimizing degradation of SiC bipolar semiconductor devices

2006-11-16

2008-09-23

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S095000, C117S105000

Reexamination Certificate

active

07427326

ABSTRACT:
A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.

REFERENCES:
patent: 3988762 (1976-10-01), Cline et al.
patent: 3988771 (1976-10-01), Krishna
patent: 3988772 (1976-10-01), Krishna
patent: 4912063 (1990-03-01), Davis et al.
patent: 4912064 (1990-03-01), Kong et al.
patent: 5093576 (1992-03-01), Edmond et al.
patent: 5230768 (1993-07-01), Furukawa et al.
patent: 5313078 (1994-05-01), Fujii et al.
patent: 5329141 (1994-07-01), Suzuki et al.
patent: 5814546 (1998-09-01), Hermansson
patent: 6054706 (2000-04-01), Razeghi
patent: 6100111 (2000-08-01), Konstantinov
patent: 6338629 (1994-12-01), None
Philip g. Neudec et al., 2000 V 6H-SiC p-n Junction Diodes Grown by Chemical Vapor Deposition, Applied Physics Letters, Mar. 14, 1994, pp. 1386-1388, vol. 64, No. 11.
Sei-Hyung Ryu et al., 1800 V NPN Bipolar Junction Transistors in 4H-SiC, IEEE Electron Device Letters, Mar. 2001, pp. 124-126, vol. 22 No. 3, IEEE Inc. New York.
Sei-Hyung Ryu et al., 3100 V, Asymmetrical, Gate Turn-Off (GTO) Thyristors in 4H-SiC, IEEE Electron Device Letters, Mar. 2001, pp. 127-129, vol. 22, No. 3, IEEE Inc. New York.
J.W. Palmour et al., Silicon Carbide for Power Devices, Power Semiconductor Devices and IC's, IEEE Intl. Symposium on Weimar, Germany, May 26-29, 1997, pp. 25-32, IEEE Inc. NY.
J.P. Bergman et al., Defects in 4H Silicon Carbide, 21st Intl. Conference on Defects in Semiconductors, Giessen, Germany, Jul. 16-20, 2001, Physica B, Dec. 2001, p. 675-679, vol. 308-310.

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