Method of forming capacitors, method of processing dielectric la

Details Method of forming capacitors, method of processing dielectric la Method of forming capacitors, method of processing dielectric la

1998-05-07

2000-12-26

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 438396, 438386, 438393, 438253, 438627, 438381, 257310, 257295, 257751, H01L 218242

Patent

active

061658340

ABSTRACT:
The invention comprises methods of forming capacitors, methods of processing dielectric layers, and methods of forming a DRAM cell. In one implementation, a method of processing a dielectric layer comprises forming a high K oxygen containing dielectric layer over a substrate. The high K dielectric layer is annealed at a temperature of at least about 200.degree. C. and at a pressure of at least about 50 Torr in an ozone comprising atmosphere. In another implementation, annealing of the high K dielectric layer is conducted at a temperature of at least about 200.degree. C. and at a pressure of at least about 0.1 Torr in an ozone comprising atmosphere which is void of plasma. Pressures of greater than one atmosphere are most preferred. In another implementation, annealing of the high K capacitor dielectric layer is conducted at a substrate temperature of at least about 300.degree. C. in an activated oxygen atmosphere produced at least in part from oxygen subjected to remote microwave plasma. The processing is ideally implemented in capacitor fabrication, and more particularly in DRAM circuitry fabrication.

REFERENCES:
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 4464701 (1984-08-01), Roberts et al.
patent: 4891682 (1990-01-01), Yusa et al.
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5079191 (1992-01-01), Shinriki et al.
patent: 5111355 (1992-05-01), Anand et al.
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5234556 (1993-08-01), Oishi et al.
patent: 5279985 (1994-01-01), Kamiyama et al.
patent: 5293510 (1994-03-01), Takenaka
patent: 5316982 (1994-05-01), Taniguchi
patent: 5330935 (1994-07-01), Dobuzinsky et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5348894 (1994-09-01), Gnade et al.
patent: 5352623 (1994-10-01), Kamiyama
patent: 5362632 (1994-11-01), Mathews
patent: 5372859 (1994-12-01), Thakoor
patent: 5397446 (1995-03-01), Ishihara et al.
patent: 5442213 (1995-08-01), Okudaira
patent: 5466629 (1995-11-01), Mihara et al.
patent: 5468687 (1995-11-01), Carl et al.
patent: 5471364 (1995-11-01), Summerfelt et al.
patent: 5504041 (1996-04-01), Summerfelt
patent: 5508953 (1996-04-01), Fukuda et al.
patent: 5510651 (1996-04-01), Maniar et al.
patent: 5552337 (1996-09-01), Kwon et al.
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5585300 (1996-12-01), Summerfelt
patent: 5617290 (1997-04-01), Kulwicki et al.
patent: 5641702 (1997-06-01), Imai et al.
patent: 5654222 (1997-08-01), Sandhu et al.
patent: 5663088 (1997-09-01), Sandhu et al.
patent: 5668040 (1997-09-01), Byun
patent: 5688724 (1997-11-01), Yoon et al.
patent: 5728603 (1998-03-01), Emesh et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5780359 (1998-07-01), Brown et al.
patent: 5786248 (1998-07-01), Schuegraf
patent: 5790366 (1998-08-01), Desu et al.
patent: 5798903 (1998-08-01), Dhote et al.
patent: 5807774 (1998-09-01), Desu et al.
patent: 5814852 (1998-09-01), Sandhu et al.
patent: 5834345 (1998-11-01), Shimizu
patent: 5837591 (1998-11-01), Shimada et al.
patent: 5837593 (1998-11-01), Park et al.
patent: 5838035 (1998-11-01), Ramesh
patent: 5843830 (1998-12-01), Graettinger et al.
patent: 5844771 (1998-12-01), Graettinger et al.
patent: 5872696 (1999-02-01), Peters et al.
patent: 5888295 (1999-03-01), Sandhu et al.
patent: 5899740 (1999-05-01), Kwon
patent: 5910218 (1999-06-01), Park et al.
patent: 5910880 (1999-06-01), DeBoer et al.
patent: 5916634 (1999-06-01), Fleming et al.
patent: 5919531 (1999-07-01), Arkles et al.
patent: 5930584 (1999-07-01), Sun et al.
patent: 5933316 (1999-08-01), Ramakrishnan et al.
patent: 5955758 (1999-09-01), Sandhu et al.
patent: 5970369 (1999-10-01), Hara et al.
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6010744 (2000-01-01), Buskirk et al.
patent: 6015989 (2000-01-01), Horikawa et al.
patent: 6027969 (2000-02-01), Huang et al.
patent: 6028360 (2000-02-01), Nakamura et al.
patent: 6046469 (2000-04-01), Yamazaki et al.
patent: 6051859 (2000-04-01), Hosotani et al.
H. Shinriki and M. Nakata, IEEE Transaction On Electron Devices, vol. 38 No. 3, Mar. 1991.
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, pp. 589-591, 1990.
McIntyre, Paul C. et al., "Kinetics And Mechanisms of TiN Oxidation Beneath Pt/TiN Films", J. Appl. Phys., vol. 82, No. 9, pp. 4577-4585 (Nov. 1997).
Onishi, Shigeo et al., "A Half-Micron Ferroelectric Memory Cell Technology With Stacked Capacitor Structure", I.E.E.E., IDEM 94-843, pp. 843-846 (1994).
Eimori, T., et al. "Newly Designed Planar Stacked Capacitor Cell with High Dielectric Constant Film for 256Mbit DRAM" I.E.E.E., IEDM 93-631-4, pp. 631-634 (1993).
Fazan, P.C., et al., "High-C Capacitor (20.4fF/.mu.m.sup.2) with Ultrathin CVD-Ta.sub.2 O.sub.5 Films Deposited on Rugged Poly-Si for High Density DRAMs", I.E.E.E., pp. 263-266 (1992).
Lesaicherre, P-Y, et. al., "A Gbit-Scale DRAM Stacked Capacitor Technology with ECR MOCVD SrTiO.sub.3 and RIE Patterned RuO.sub.2 /TiN Storage Nodes", I.E.E.E., pp. 831-834 (1994).
Yamaguchi, H., et al., "Structural and Electrical Characterization of SrTiO.sub.3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition", Jpn. J. Appl. Phys., vol. 32 (Pt. 1, No. 9B), pp. 4069-4073 (1993).
Kamiyama, S., et. al., "Highly Reliable 2.5nm Ta.sub.2 O.sub.5 Capacitor Process Technology for 256Mbit DRAMs", I.E.E.E., pp. 827-830 (1991).
Kamiyama, S., et. al., "Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation Prior to Low Pressure Chemical Vapor Deposition", J. Electrochem. Soc., vol. 140, No. 6, pp. 1617-1625 (Jun. 1993).
H. Shinriki and M. Nakata, IEEE Transaction On Electron Devices vol. 38 No. 3 Mar. 1991.
U.S. application No. 09/059,057, Agarwal et al., filed Apr. 10, 1998.
U.S. application No. 09/033,063, Al-Shareef et al., filed Feb. 28, 1998.
U.S. application No. 09/033,064, Al-Shareef et al., filed Feb. 28, 1998.
U.S. application No. 09/058,612, Agarwal et al., filed Apr. 10, 1998.
U.S. application No. 09/137,780, Al-Shareef et al., filed Aug. 20, 1998.
U.S. application No. 09/083,257, Al-Shareef et al., filed May 21, 1998.
U.S. application No. 08/858,027, Sandhu et al., filed May 16, 1997.
U.S. application No. 08/738,789, Sandhu et al., filed Oct. 29, 1996.
U.S. application No. 08/881,561, Sandhu et al., filed Jun. 24, 1997.
U.S. application No. 09/086,389, Sandhu et al., filed May 28, 1998.
U.S. application No. 09/122,473, Schuegraf, filed Jul. 23, 1998.
U.S. application No. 09/098,035, DeBoer et al., filed Jun. 15, 1998.
U.S. application No. 09/185,412, Graettinger et al., filed Nov. 3, 1998.
U.S. application No. 08/944,054, Parekh et al., filed Dec. 18, 1997.
U.S. application No. 08/916,771, DeBoer et al., filed Aug. 20, 1997.
U.S. application No. 08/670,644, Graettinger et al.
U.S. application No. 08/542,430, Schuegraf.
U.S. application No. 09/229,518, Deboer et al., filed Jan. 13, 1999.
M.A. Farooq, S.P. Murarka, C.C. Chang, F.A. Baiocchi, Tantalum nitride as a dissusion barrier between Pd.sub.2 Si, CoSi.sub.2 and aluminum, 1989 American Institute of Physics, pp. 3017-3022.
Anonymous Research Disclosure, 1989R D-0299041 titled "Double High Dielectric", Derwent World Patent Index; Derwent-Week 19817.
U.S. application No. 08/994,054, Kunal R. Parekh et al., filed Dec. 19, 1997.

Affiliated with

Also associated with

Rating

Method of forming capacitors, method of processing dielectric la does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming capacitors, method of processing dielectric la, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming capacitors, method of processing dielectric la will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-993953