Method of improving diffusion barrier properties of gate oxides

Details Method of improving diffusion barrier properties of gate oxides Method of improving diffusion barrier properties of gate oxides

1997-08-08

2000-03-21

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438286, H01L 21318

Patent

active

060402490

ABSTRACT:
A method of providing a MOSFET having improved gate oxide diffusion barrier properties, which comprises providing a partially fabricated MOSFET having an exposed gate oxide surface. During MOSFET fabrication, the surface of the exposed gate oxide is converted to an oxynitride by applying one or both of ions or free radicals of nitrogen to the exposed gate oxide surface. Fabrication of the MOSFET is then completed in standard manner.

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