Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-11-13
2011-11-08
Mai, Anh (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S221000, C438S275000, C257SE21461
Reexamination Certificate
active
08053304
ABSTRACT:
A method of forming an integrated circuit structure includes forming a first recess in the semiconductor substrate; and forming a dislocation-blocking layer in the first recess. The dislocation-blocking layer includes a semiconductor material. Shallow trench isolation (STI) regions are formed, wherein inner portions of the STI regions are directly over portions of the dislocation-blocking layer, and wherein inner sidewalls of the STI regions contact the dislocation-blocking layer. A second recess is formed by removing a portion of the dislocation-blocking layer between two of the inner sidewalls of the STI regions, with the two inner sidewalls facing each other. A semiconductor region is epitaxially grown in the second recess.
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Mai Anh
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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