Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-27
2011-11-08
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S254000, C438S396000, C438S397000
Reexamination Certificate
active
08053308
ABSTRACT:
In a method of forming a pattern, a mold layer having an opening is formed on a substrate. A conductive layer is formed on the mold layer having the opening, the conductive layer having a substantially uniform thickness. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern having a cross-linked structure of water-soluble copolymers including a repeating unit of N-vinyl-2-pyrrolidone and a repeating unit of acrylate. An upper portion of the conductive layer exposed over the buffer layer pattern is etched. Accordingly, a conductive pattern for a semiconductor device is formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.
REFERENCES:
patent: 5061601 (1991-10-01), West et al.
patent: 5843319 (1998-12-01), Przybilla et al.
patent: 6136643 (2000-10-01), Jeng et al.
patent: 6315912 (2001-11-01), Koshitaka et al.
patent: 7122424 (2006-10-01), Tu et al.
patent: 7288585 (2007-10-01), Moad et al.
patent: 2002/0177069 (2002-11-01), Jung et al.
patent: 2006/0160021 (2006-07-01), Kim et al.
patent: 2001-0056943 (2001-07-01), None
patent: 2004-0046704 (2004-06-01), None
patent: 2006-0059443 (2006-06-01), None
English language abstract of Korean Publication No. 2001-0056943.
English language abstract of Korean Publication No. 2004-0046704.
English language abstract of Korean Publication No. 2006-0059443.
Kim Jae-Ho
Kim Kyoung-Min
Kim Myung-Sun
Kim Young-Ho
Garber Charles
Harness & Dickey & Pierce P.L.C.
Junge Bryan
Samsung Electronics Co,. Ltd.
LandOfFree
Method of forming a pattern and method of manufacturing a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a pattern and method of manufacturing a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a pattern and method of manufacturing a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4265638