Simultaneous grain modulation for BEOL applications

Details Simultaneous grain modulation for BEOL applications Simultaneous grain modulation for BEOL applications

2008-01-07

2010-06-08

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21575, C257SE21627, C257SE21641

Reexamination Certificate

active

07732922

ABSTRACT:
The invention is directed to an improved semiconductor structure, such that within the same insulating layer, Cu interconnects embedded within the same insulating level layer have a different Cu grain size than other Cu interconnects embedded within the same insulating level layer.

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