Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-03-27
2010-11-23
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S658000, C438S680000, C438S686000, C438S758000, C257SE21476, C257SE21591
Reexamination Certificate
active
07838423
ABSTRACT:
Methods of forming capping structures on one or more different material surfaces are provided. One embodiment includes disposing a semiconductor structure in a reduced pressure chamber, forming a capping GCIB within the reduced pressure chamber, and directing the capping GCIB onto at least one of the one or more different material surfaces, so as to form at least one capping structure on the one or more surfaces onto which the capping GCIB is directed.
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Geffken Robert Michael
Hautala John J.
Learn Arthur J.
Sherman Steven R.
Garber Charles D
Roman Angel
TEL Epion Inc.
Wood Herron & Evans LLP
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