Multi-bit flash memory device and program method thereof

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Reexamination Certificate

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Details

C365S230080, C365S238500, C365S239000

Reexamination Certificate

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07813187

ABSTRACT:
A method for programming a flash memory device including a plurality of memory cells, each storing multi-bit data, includes reading data from selected memory cells. An error of the read data is detected and corrected. Input program data is programmed into the selected memory cells based upon the error-corrected read data.

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patent: 1998-027610 (1998-07-01), None
patent: 1020060051898 (2006-05-01), None
English Abstract for Publication No. 1998-027610.
English Abstract for Publication No. 1020060051898.

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