Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-06-10
2010-11-23
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C257S315000, C257S330000, C257SE21209, C257SE21422
Reexamination Certificate
active
07838365
ABSTRACT:
A new SONOS memory device is provided, in which a conventional planar surface of multi-dielectric layers (ONO layers) is instead formed with a curved surface such as a cylindrical shape, and included is a method for fabricating the same.A radius of curvature of the upper surface of a blocking oxide can be designed to be larger than that of the lower surface of a tunneling oxide, which restrains electrons from passing through the blocking oxide by back-tunneling on erasing. As a result, a SONOS memory device shows an improvement in erasing speed.
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Lee Jung Hoon
Park Byung Gook
F.Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Seoul National University Industry Foundation
Toledo Fernando L
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