SONOS memory device having curved surface and method for...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S259000, C257S315000, C257S330000, C257SE21209, C257SE21422

Reexamination Certificate

active

07838365

ABSTRACT:
A new SONOS memory device is provided, in which a conventional planar surface of multi-dielectric layers (ONO layers) is instead formed with a curved surface such as a cylindrical shape, and included is a method for fabricating the same.A radius of curvature of the upper surface of a blocking oxide can be designed to be larger than that of the lower surface of a tunneling oxide, which restrains electrons from passing through the blocking oxide by back-tunneling on erasing. As a result, a SONOS memory device shows an improvement in erasing speed.

REFERENCES:
patent: 6548861 (2003-04-01), Palm et al.
patent: 6794249 (2004-09-01), Palm et al.
patent: 7250651 (2007-07-01), Kusters et al.
patent: 2006/0038220 (2006-02-01), Kusters et al.
patent: 2008/0157172 (2008-07-01), Lee
patent: 1020030020644 (2003-03-01), None
Reisinger et al., “A Novel SONOS Structure for Nonvolatile Memories with Improved Data Retention”, Symposium on VLSI Technology Digest of Technical Papers, 1997, pp. 113-114.
Lee et al., “A Novel Structure of SiO2 /SiN/High k Dielectrics, A12O3 for SONOS Type Flash Memory”, Int'l Conf. Solid State Dev. Materials, 2002, pp. 162-163.
Lee et al., “A Novel SONOS Structure of SiO2/SiN/A12O3 with TaN Metal Gate for Multi-giga Bit Flash Memories”, Int'l Electron Dev. Meeting, 2003, pp. 613-616.

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