Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-03
2010-12-07
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S710000, C438S723000, C438S783000
Reexamination Certificate
active
07846793
ABSTRACT:
A device, such as a nonvolatile memory device, and methods for forming the device in an integrated process tool are provided. The method includes depositing a tunnel oxide layer on a substrate, exposing the tunnel oxide layer to a plasma so that the plasma alters a morphology of a surface and near surface of the tunnel oxide to form a plasma altered near surface. Nanocrystals are then deposited on the altered surface of the tunnel oxide.
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Kraus Phillip Allan
Li Ming
Olsen Christopher S.
Seutter Sean
Applied Materials Inc.
Patterson & Sheridan LLP
Taylor Earl N
Vu David
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