Nonvolatile memory device and fabrication method

Details Nonvolatile memory device and fabrication method Nonvolatile memory device and fabrication method

2006-12-20

2010-12-14

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S981000

Reexamination Certificate

active

07851304

ABSTRACT:
Provided is a nonvolatile memory device and a fabrication method. The nonvolatile memory device includes an active region defined in a semiconductor substrate, a gate insulating layer formed on the active region and a plurality of gate patterns formed on the gate insulating layer, and crossing over the active region. The gate insulating layer includes a discharge region in a predetermined portion between the gate patterns, the discharge region having a lesser thickness than that of the gate insulating layer under the gate pattern, because a thickness portion of the gate insulating layer is removed to form the discharge region.

REFERENCES:
patent: 5103273 (1992-04-01), Gill et al.
patent: 5321288 (1994-06-01), Gill et al.
patent: 5590072 (1996-12-01), Choi
patent: 6337245 (2002-01-01), Choi
patent: 6573568 (2003-06-01), Lin et al.
patent: 6620681 (2003-09-01), Kim et al.
patent: 2004/0229450 (2004-11-01), Ding
patent: 1020020092234 (2002-12-01), None
patent: 1020040070905 (2004-08-01), None
patent: 1020050052598 (2005-06-01), None
patent: 1020050079233 (2005-08-01), None
patent: 1020060009810 (2006-02-01), None

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