Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2006-10-17

2010-11-09

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21679

Reexamination Certificate

active

07829412

ABSTRACT:
A method of manufacturing a flash memory device is disclosed. A first oxide layer, a nitride layer, a second oxide layer, and a first polysilicon layer, which is a part of a polysilicon layer for a control gate, are formed to a predetermined thickness on a semiconductor substrate. A first etch process is performed to form gate patterns. An insulating layer is formed on the entire surface. A second etch process is implemented so that insulating layer spacers are formed on both sidewalls of each gate pattern while exposing the first polysilicon layer. A second polysilicon layer for the control gate is formed on the entire surface.

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