Method of fabricating a semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21209

Reexamination Certificate

active

07579244

ABSTRACT:
The present invention provides a semiconductor device in which the gate is self-aligned to the device isolation film and a fabricating method thereof. A device isolation film restricting an active region is disposed on a portion of a semiconductor substrate, and a word line is across over the device isolation film. A gate pattern is disposed between the word line and the active region, and a tunnel oxide film is disposed between the gate pattern and the active region. The gate pattern comprises a floating gate pattern, a gate interlayer dielectric film pattern and a control gate electrode pattern deposited in the respective order, and has a sidewall self-aligned to the device isolation film. To form the gate pattern having the sidewall self-aligned to the device isolation film, a gate insulation film and a gate material film are formed in the respective order on the semiconductor substrate.

REFERENCES:
patent: 4825271 (1989-04-01), Tanaka et al.
patent: 5643813 (1997-07-01), Acocella et al.
patent: 5918125 (1999-06-01), Guo et al.
patent: 6166410 (2000-12-01), Lin et al.
patent: 6534393 (2003-03-01), Zhou et al.
patent: 6590255 (2003-07-01), Ichige et al.
patent: 6635921 (2003-10-01), Yi et al.
patent: 6686240 (2004-02-01), Yi et al.
patent: 6791142 (2004-09-01), Tseng
patent: 6794708 (2004-09-01), Mori

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4125480

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.