Methods of forming semiconductor devices including Fin...

Details Methods of forming semiconductor devices including Fin... Methods of forming semiconductor devices including Fin...

2007-03-27

2009-02-24

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S592000, C257SE21410

Reexamination Certificate

active

07494877

ABSTRACT:
A method of forming a semiconductor device may include forming a fin structure extending from a substrate. The fin structure may include first and second source/drain regions and a channel region therebetween, and the first and second source/drain regions may extend a greater distance from the substrate than the channel region. A gate insulating layer may be formed on the channel region, and a gate electrode may be formed on the gate insulating layer so that the gate insulating layer is between the gate electrode and the channel region. Related devices are also discussed.

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patent: 10/189966 (1998-07-01), None
patent: 2003-0032239 (2003-04-01), None

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