Nonvolatile memory device and methods of forming the same

Details Nonvolatile memory device and methods of forming the same Nonvolatile memory device and methods of forming the same

2006-10-30

2009-11-17

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S304000, C257SE21423

Reexamination Certificate

active

07618864

ABSTRACT:
Example embodiments relate to a semiconductor memory device and methods of forming the same. Other example embodiments relate to a nonvolatile memory device and methods of forming the same. The memory device may include memory cells separately formed on a channel region between impurity regions formed on a substrate. The memory cells may each include a memory layer having a tunnel insulating layer, a nano-sized charge storage layer, and a blocking insulating layer and a side gate formed on the memory layer. According to example embodiments, larger scale integration of the nonvolatile memory devices may be achieved and the reliability of the memory devices may increase.

REFERENCES:
patent: 6673677 (2004-01-01), Hofmann et al.
patent: 6927131 (2005-08-01), Kim
patent: 1020040072342 (2004-08-01), None
patent: 1020040085663 (2004-10-01), None

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