Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-31
2009-02-17
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27112
Reexamination Certificate
active
07492016
ABSTRACT:
A chip includes a CMOS structure having a bulk device disposed in a first region of a semiconductor substrate in conductive communication with an underlying bulk region of the substrate, the first region and the bulk region having a first crystal orientation. A SOI device is disposed in a semiconductor-on-insulator (“SOI”) layer separated from the bulk region of the substrate by a buried dielectric layer, the SOI layer having a different crystal orientation from the first crystal orientation. In one example, the bulk device includes a p-type field effect transistor (“PFET”) and the SOI device includes an n-type field effect transistor (“NFET”) device. Alternatively, the bulk device can include an NFET and the SOI device can include a PFET. When the SOI device has a gate conductor in conductive communication with a gate conductor of the bulk device, charging damage can occur to the SOI device, except for the presence of diodes in reverse-biased conductive communication with the bulk region. The diodes are operable to conduct a discharge current to the bulk region when either a voltage on the gate conductor or a voltage on the source or drain region of the SOI device exceeds a diode's breakdown voltage.
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International Search Report and Written Opinion for FIS920050020.
Hook Terence B.
Mocuta Anda C.
Sleight Jeffrey W.
Stamper Anthony K.
International Business Machines - Corporation
Jaklitsch Lisa U.
Neff Daryl
Pert Evan
Sandvik Ben P
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