Transistors of semiconductor device having channel region in...

Details Transistors of semiconductor device having channel region in... Transistors of semiconductor device having channel region in...

2005-03-04

2009-02-17

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S245000, C257SE21653

Reexamination Certificate

active

07491603

ABSTRACT:
According to some embodiments of the invention, transistors of a semiconductor device have a channel region in a channel-portion hole. Methods include forming embodiments of the transistor having a channel-portion hole disposed in a semiconductor substrate. A channel-portion trench pad and a channel-portion layer are sequentially formed at a lower portion of the channel-portion hole. A word line insulating layer pattern and a word line pattern are sequentially stacked on the channel-portion layer and fill the channel-portion hole, disposed on the semiconductor substrate. The channel-portion layer is formed to contact the semiconductor substrate through a portion of sidewall of the channel-portion hole, and forms a channel region under the word line pattern. Punchthrough is prevented between electrode impurity regions corresponding to source and drain regions.

REFERENCES:
patent: 6355974 (2002-03-01), Lin et al.
patent: 6423618 (2002-07-01), Lin et al.
patent: 6787838 (2004-09-01), Chidambarrao et al.
patent: 10-032331 (1998-03-01), None
patent: 1998-034616 (1998-08-01), None
patent: 1998-068340 (1998-10-01), None
patent: 1999-0049708 (1999-07-01), None
English language abstract of Japanese Publication No. 10-032331.
English language abstract of Korean Publication No. 1998-068340.

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