Methods of filling trenches using high-density plasma...

Details Methods of filling trenches using high-density plasma... Methods of filling trenches using high-density plasma...

2006-04-11

2009-10-06

Norton, Nadine (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S424000, C438S689000, C438S701000, C438S711000, C438S723000, C438S783000

Reexamination Certificate

active

07598177

ABSTRACT:
Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

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