Methods of forming void-free layers in openings of...

Details Methods of forming void-free layers in openings of... Methods of forming void-free layers in openings of...

2005-04-15

2009-12-08

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S424000, C257S506000, C257S510000

Reexamination Certificate

active

07629217

ABSTRACT:
In a method of manufacturing a floating gate of a non-volatile semiconductor memory, a pattern is formed on a substrate to have an opening that exposes a portion of the substrate. A first preliminary polysilicon layer is formed on the pattern and the exposed portion of the substrate to substantially fill the opening. A first polysilicon layer is formed by partially etching the first preliminary polysilicon layer until a first void formed in the first preliminary polysilicon layer is exposed. A second polysilicon layer is formed on the first polysilicon layer.

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patent: 1997-0018360 (1997-04-01), None
patent: 2000-0015110 (2000-03-01), None

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