Methods of manufacturing multiple gate CMOS transistors...

Details Methods of manufacturing multiple gate CMOS transistors... Methods of manufacturing multiple gate CMOS transistors...

2005-11-15

2008-12-09

Smith, Matthew S. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S274000

Reexamination Certificate

active

07462538

ABSTRACT:
Semiconductor devices with transistors having different gate dielectric materials and methods of manufacture thereof are disclosed. One embodiment includes a semiconductor device including a workpiece, the workpiece including a first region and a second region proximate the first region. A first transistor is disposed in the first region of the workpiece, the first transistor having at least two first gate electrodes. A first gate dielectric is disposed proximate each of the at least two first gate electrodes, the first gate dielectric comprising a first material. A second transistor is disposed in the second region of the workpiece, the second transistor having at least two second gate electrodes. A second gate dielectric is disposed proximate each of the at least two second gate electrodes, the second gate dielectric comprising a second material. The second material is different than the first material.

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