Method for forming dual etch stop liner and protective layer...

Details Method for forming dual etch stop liner and protective layer... Method for forming dual etch stop liner and protective layer...

2007-12-11

2007-12-11

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000, C438S581000, C438S583000, C438S791000, C438S508000, C257SE21292, C257SE21293

Reexamination Certificate

active

10905024

ABSTRACT:
The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a protective layer to a device, applying a first silicon nitride liner to the device, removing a portion of the first silicon nitride liner, removing a portion of the protective layer, and applying a second silicon nitride liner to the device.

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patent: 6939814 (2005-09-01), Chan et al.
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patent: 2004/0126990 (2004-07-01), Ohta
patent: 2004/0180536 (2004-09-01), Fujiwara et al.
patent: 2005/0260810 (2005-11-01), Cheng et al.
patent: 2006/0079046 (2006-04-01), Yang et al.
patent: 2006/0113568 (2006-06-01), Chan et al.

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