Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-04
2007-12-04
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S377000, C438S552000, C438S553000, C438S671000, C438S717000, C438S736000, C438S752000, C257S019000, C257S055000, C257S063000, C257S616000
Reexamination Certificate
active
10689506
ABSTRACT:
A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel.
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Z. Yang, et al., &#
Chen Huajie
Chidambarrao Dureseti
Dokumaci Omer H
Abate Joseph P.
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
Jr. Carl Whitehead
Mitchell James M
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