Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-07-10
2007-07-10
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S098000, C438S151000, C438S161000, C438S197000, C438S453000, C438S523000, C438S533000, C438S586000, C438S597000, C438S600000, C438S622000, C438S625000, C438S629000, C438S672000
Reexamination Certificate
active
10932218
ABSTRACT:
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of forming a conductive contact to a source/drain region of a field effect transistor includes providing gate dielectric material intermediate a transistor gate and a channel region of a field effect transistor. At least some of the gate dielectric material extends to be received over at least one source/drain region of the field effect transistor. The gate dielectric material received over the one source/drain region is exposed to conditions effective to change it from being electrically insulative to being electrically conductive and in conductive contact with the one source/drain region. Other aspects and implementations are contemplated.
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Basceri Cem
Manning H. Montgomery
Sandhu Gurtej S.
Jr. Carl Whitehead
Micro)n Technology, Inc.
Mitchell James M
Wells St. John P.S.
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