Methods of forming a capacitor

Details Methods of forming a capacitor Methods of forming a capacitor

2007-05-15

2007-05-15

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S785000

Reexamination Certificate

active

11112127

ABSTRACT:
A method of forming a capacitor having a capacitor dielectric layer comprising ABO3, where “A” is selected from the group consisting of Group IIA and Group IVB metal elements and mixtures thereof, where “B” is selected from the group consisting of Group IVA elements and mixtures thereof, includes feeding a plurality of precursors comprising A, B and O to a chamber having a substrate positioned therein under conditions effective to chemical vapor deposit an ABO3-comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of B at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B. The ABO3-comprising dielectric layer is incorporated into a capacitor, with the ABO3-comprising dielectric layer comprising a capacitor dielectric layer of the capacitor and having a dielectric constant k of at least 20 in the capacitor.

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