ROM embedded DRAM with anti-fuse programming

Details ROM embedded DRAM with anti-fuse programming ROM embedded DRAM with anti-fuse programming

2007-05-15

2007-05-15

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S225700, C365S102000

Reexamination Certificate

active

10843161

ABSTRACT:
A ROM embedded DRAM provides ROM cells that can be electrically programmed to a data state using DRAM capacitor memory cells. Numerous techniques for reading the memory cells are provided if a single state memory is desired. For example, bias techniques allow un-programmed ROM cells to be read accurately. In one embodiment, the memory includes program circuitry to short capacitor plates together by breaking down an intermediate dielectric layer using anti-fuse programming techniques.

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