Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-03-20
2007-03-20
Menz, Doug (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S758000
Reexamination Certificate
active
10835788
ABSTRACT:
A method of forming a SiCOH etch stop layer in a copper damascene process is described. A substrate with an exposed metal layer is treated with H2or NH3plasma to remove metal oxides. Trimethylsilane is flowed into a chamber with no RF power at about 350° C. to form at least a monolayer on the exposed metal layer. The SiCOH layer is formed by a PECVD process including trimethylsilane and CO2source gases. Optionally, a composite SiCOH layer comprised of a low compressive stress layer on a high compressive stress layer is formed on the substrate. A conventional damascene sequence is then used to form a second metal layer on the exposed metal layer. Via Rc stability is improved and a lower leakage current is achieved with the trimethylsilane passivation layer. A composite SiCOH etch stop layer provides improved stress migration resistance compared to a single low stress SiCOH layer.
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Chang Weng
Chen Bi-Troug
Jang Syun-Ming
Lin Su-Horng
Wu Zhen-Cheng
Haynes and Boone LLP
Menz Doug
Taiwan Semiconductor Manufacturing Company , Ltd.
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