MIS capacitor

Details MIS capacitor MIS capacitor

2007-01-16

2007-01-16

Ha, Nathan (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

10145993

ABSTRACT:
An MIS capacitor with low leakage and high capacitance is disclosed. A layer of hemispherical grained polysilicon (HSG) is formed as a lower electrode. Prior to the dielectric formation, the hemispherical grained polysilicon layer may be optionally subjected to a nitridization or anneal process. A dielectric layer of aluminum oxide (Al2O3), or a composite stack of interleaved layers of aluminum oxide and other metal oxide dielectric materials, is fabricated over the hemispherical grained polysilicon layer and after the optional nitridization or anneal process. The dielectric layer of aluminum oxide (Al2O3) or the aluminum oxide composite stack may be optionally subjected to a post-deposition treatment to further increase the capacitance and decrease the leakage current. A metal nitride upper electrode is formed over the dielectric layer or the composite stack by a deposition technique or by atomic layer deposition.

REFERENCES:
patent: 6027970 (2000-02-01), Sharan et al.
patent: 6046084 (2000-04-01), Wei et al.
patent: 6165830 (2000-12-01), Lin et al.
patent: 6171955 (2001-01-01), Chen
patent: 6316800 (2001-11-01), Al-Shareef et al.
patent: 6492241 (2002-12-01), Rhodes et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6794255 (2004-09-01), Forbes et al.
patent: 6870210 (2005-03-01), Ping et al.
patent: 6881642 (2005-04-01), Basceri et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2002/0000596 (2002-01-01), Carstensen
patent: 2002/0036312 (2002-03-01), Bertagnolli et al.
patent: 2002/0086556 (2002-07-01), Ahn et al.
patent: 2002/0098646 (2002-07-01), Hirano et al.
patent: 2003/0052358 (2003-03-01), Weimer
patent: 2003/0064566 (2003-04-01), Yang et al.
patent: 2003/0075802 (2003-04-01), Derraa et al.
patent: 2003/0136988 (2003-07-01), Zheng et al.
patent: 2003/0168750 (2003-09-01), Basceri et al.
patent: 2003/0205729 (2003-11-01), Basceri et al.
patent: 2003/0213987 (2003-11-01), Basceri et al.
patent: 2003/0232497 (2003-12-01), Xi et al.
patent: 2004/0036102 (2004-02-01), Sell et al
patent: 2004/0046197 (2004-03-01), Basceri et al.
M. Gutsche, et al., “Capacitance Enhancement Techniques for Sub-100nm Trench DRAMs”, International Electron Devices Meeting, 2001; Dec. 2001, pp. 18.6.1 to 18.6.4.

Affiliated with

Also associated with

Rating

MIS capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MIS capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIS capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3767104