Silicon oxidation method

Details Silicon oxidation method Silicon oxidation method

2007-04-24

2007-04-24

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S185000, C438S305000, C438S595000

Reexamination Certificate

active

10875665

ABSTRACT:
A method for forming, by thermal oxidation, a silicon oxide layer on an integrated circuit including three-dimensional silicon patterns, includes implanting a first element according to a first angle with respect to a horizontal direction. The first element is electrically neutral and has a first effect on the growth rate of a thermal oxide on silicon. A second element is implanted according to a second angle with respect to the horizontal direction. The second element is electrically neutral and has a second effect complementary to the first effect on the growth rate of a thermal oxide on silicon. The second angle is distinct from the first angle, and one of the first and second angles is a right angled. The silicon is thermally oxidized.

REFERENCES:
patent: 6943098 (2005-09-01), Yeh et al.
patent: 10062494 (2002-05-01), None
patent: 2000269496 (2000-09-01), None
French Search Report, FR 0350276, Mar. 12, 2004.

Affiliated with

Also associated with

Rating

Silicon oxidation method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon oxidation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon oxidation method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3729317