Method of forming polysilicon layers in non-volatile memory

Details Method of forming polysilicon layers in non-volatile memory Method of forming polysilicon layers in non-volatile memory

2007-01-09

2007-01-09

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S593000, C257S315000, C365S185240, C365S185260

Reexamination Certificate

active

10870285

ABSTRACT:
In accordance with an embodiment of the present invention, a semiconductor structure includes an undoped polysilicon layer, a doped polysilicon layer in contact with the undoped polysilicon layer, and an insulating layer in contact with the undoped polysilicon layer. The undoped polysilicon layer is sandwiched between the doped polysilicon layer and the insulating layer.

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Merriam-Webster's Collegiate Dictionary, 10th Ed. Merriam-Webster, Inc.: Springfield, MA, 1998, p. 482.
Ng, Kwok K., Complete Guide to Semiconductor Devices, 2nd Ed. John Wiley & Sons: New York, 2002, pp. 346-347.

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