Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-10
2006-10-10
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S258000, C438S259000, C438S260000, C438S261000, C438S264000, C438S266000, C438S267000, C438S301000
Reexamination Certificate
active
07118969
ABSTRACT:
A method of manufacturing a floating gate provides an enhancement for the efficiencies of electron charge and injection. First, a conductive pattern, constituting the floating gate is formed on a substrate. A first insulation layer is formed on a sidewall of the conductive pattern, and then a second insulation layer is formed at an upper portion of the conductive pattern in ways that increase the sharpness of an edge portion where the sidewall and upper portions of the conductive pattern meet. Therefore, electron transference from the floating ate to a control gate is facilitated.
REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 5242848 (1993-09-01), Yeh
patent: 5480819 (1996-01-01), Huang
patent: 5917214 (1999-06-01), Sung
patent: 6380035 (2002-04-01), Sung et al.
patent: 6424002 (2002-07-01), Kondo et al.
patent: 11-26616 (1999-01-01), None
patent: 11-067936 (1999-03-01), None
patent: 2001-0091532 (2001-10-01), None
Chung Jin-Kuk
Moon Chang-Rok
Lebentritt Michael
Lee Kyoung
Samsung Electronics Co,. Ltd.
LandOfFree
Method of manufacturing a floating gate and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a floating gate and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a floating gate and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3712454