Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-21
2006-02-21
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S262000
Reexamination Certificate
active
07001808
ABSTRACT:
Defects in element forming regions on which memory cells of a non-volatile memory are formed are to be diminished to reduce leakage current. End portions of element forming regions with non-volatile memory cells formed thereon are extended a length D by utilizing the region which underlies a dummy conductive film, whereby a stress induced from an insulating film which surrounds the element forming regions is concentrated on the extended region. As a result, defects do not extend up to the regions where memory cells are formed and therefore it is possible to reduce leakage current in the memory cells.
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Ikeda Yoshihiro
Okada Daisuke
Okazaki Tsutomu
Tsukamoto Keisuke
Yanagita Hiroshi
Miles & Stockbridge PC
Nguyen Cuong
Renesas Technology Corp.
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