Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-17
2006-10-17
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S692000
Reexamination Certificate
active
07122424
ABSTRACT:
A method for making crown-shaped capacitors with uniform capacitance from the center to the edge of the DRAM device is achieved. The uniform capacitance is achieved using a two-step planarization process or a uniformly deposited CVD sacrificial layer. After forming a first conducting layer in openings in an insulator, a sacrificial layer is spin coated on the substrate. The non-uniformity, by virtue of the spin coating, is then partially polished back to form a globally uniform surface followed by a plasma etch-back to leave portions of the sacrificial layer of equal height in the openings. The first conducting layer in the openings is uniformly recessed for making capacitors having uniform values across the DRAM device. In a second approach a relatively thin uniform CVD polymer is deposited requiring only a single polishing step or etch-back to achieve uniform portions of the polymer in the openings.
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Liu Yuan-Hung
Lo Chi-Hsin
Tsai Chia-Shiung
Tu Yeur-Luen
Nguyen Tuan H.
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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