Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-13
2006-06-13
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S631000, C438S633000, C438S645000, C438S692000
Reexamination Certificate
active
07060606
ABSTRACT:
Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
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Carl Daniel A.
Chen Liang-Yuh
Li Shijian
Liu Feng Q.
Mavliev Rashid
Applied Materials Inc.
Estrada Michelle
Patterson & Sheridan
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