Memory devices with page buffer having dual registers and...

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Reexamination Certificate

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C365S185120, C365S185110

Reexamination Certificate

active

07042770

ABSTRACT:
A nonvolatile memory device and programming method and apparatus therefore are described that include operatively coupled first and second sense amplifiers having first and second data registers or latches, a storage circuit for storing a data of the second amplifier, a pass/fail check circuit for checking the content of the second data register whether a cell of the memory device has been sufficiently programmed and a restore circuit for resetting the second data register for reprogramming the device until sufficiently programmed.

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