Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2006-05-09
2006-05-09
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S185120, C365S185110
Reexamination Certificate
active
07042770
ABSTRACT:
A nonvolatile memory device and programming method and apparatus therefore are described that include operatively coupled first and second sense amplifiers having first and second data registers or latches, a storage circuit for storing a data of the second amplifier, a pass/fail check circuit for checking the content of the second data register whether a cell of the memory device has been sufficiently programmed and a restore circuit for resetting the second data register for reprogramming the device until sufficiently programmed.
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Im Heung-Soo
Kwon Oh-Suk
Lee June
Auduong Gene N.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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