Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2006-05-23
2006-05-23
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S788000, C438S778000, C438S787000, C438S680000, C438S758000, C438S458000, C438S624000
Reexamination Certificate
active
07049211
ABSTRACT:
A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011ions/cm3is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.
REFERENCES:
patent: 4572841 (1986-02-01), Kaganowicz et al.
patent: 4690746 (1987-09-01), McInerney et al.
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4890575 (1990-01-01), Ito et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5089442 (1992-02-01), Olmer
patent: 5156881 (1992-10-01), Okano et al.
patent: 5270264 (1993-12-01), Andideh et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5279865 (1994-01-01), Chebi et al.
patent: 5302233 (1994-04-01), Kim et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5362526 (1994-11-01), Wang et al.
patent: 5416048 (1995-05-01), Blalock et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5507881 (1996-04-01), Sichanugrist et al.
patent: 5525550 (1996-06-01), Kato
patent: 5571576 (1996-11-01), Qian et al.
patent: 5589233 (1996-12-01), Law et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5599740 (1997-02-01), Jang et al.
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5621241 (1997-04-01), Jain
patent: 5624582 (1997-04-01), Cain
patent: 5629043 (1997-05-01), Inaba et al.
patent: 5645645 (1997-07-01), Zhang et al.
patent: 5679606 (1997-10-01), Wang et al.
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5719085 (1998-02-01), Moon et al.
patent: 5776557 (1998-07-01), Okano et al.
patent: 5786039 (1998-07-01), Brouquet
patent: 5804259 (1998-09-01), Robles
patent: 5807785 (1998-09-01), Ravi
patent: 5849455 (1998-12-01), Ueda et al.
patent: 5850105 (1998-12-01), Dawson et al.
patent: 5858876 (1999-01-01), Chew
patent: 5869149 (1999-02-01), Denison et al.
patent: 5872052 (1999-02-01), Iyer
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5874350 (1999-02-01), Nakagawa
patent: 5903106 (1999-05-01), Young et al.
patent: 5910342 (1999-06-01), Hirooka et al.
patent: 5913140 (1999-06-01), Roche et al.
patent: 5915190 (1999-06-01), Pirkle
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 5953635 (1999-09-01), Andideh
patent: 5968610 (1999-10-01), Liu et al.
patent: 5976327 (1999-11-01), Tanaka
patent: 5990000 (1999-11-01), Hong et al.
patent: 5990013 (1999-11-01), Berenguer et al.
patent: 6004831 (1999-12-01), Yamazaki et al.
patent: 6013191 (2000-01-01), Nasser-Faili et al.
patent: 6013584 (2000-01-01), M'Saad
patent: 6030666 (2000-02-01), Lam et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6037018 (2000-03-01), Jang et al.
patent: 6039851 (2000-03-01), Iyer
patent: 6042901 (2000-03-01), Denison et al.
patent: 6057242 (2000-05-01), Kishimoto
patent: 6059643 (2000-05-01), Hu et al.
patent: 6070551 (2000-06-01), Li et al.
patent: 6071573 (2000-06-01), Koemtzopoulos et al.
patent: 6074959 (2000-06-01), Wang et al.
patent: 6077786 (2000-06-01), Chakravarti et al.
patent: 6096646 (2000-08-01), Lee et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6149976 (2000-11-01), Matsuki et al.
patent: 6149986 (2000-11-01), Shibata et al.
patent: 6167834 (2001-01-01), Wang et al.
patent: 6170428 (2001-01-01), Redeker et al.
patent: 6174808 (2001-01-01), Jang et al.
patent: 6182602 (2001-02-01), Redeker et al.
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6189483 (2001-02-01), Ishikawa et al.
patent: 6190233 (2001-02-01), Hong et al.
patent: 6191026 (2001-02-01), Rana et al.
patent: 6194037 (2001-02-01), Terasaki et al.
patent: 6194038 (2001-02-01), Rossman
patent: 6197705 (2001-03-01), Vassiliev
patent: 6200412 (2001-03-01), Kilgore et al.
patent: 6203863 (2001-03-01), Liu et al.
patent: 6217658 (2001-04-01), Orczyk et al.
patent: 6224950 (2001-05-01), Hirata
patent: 6228751 (2001-05-01), Yamazaki et al.
patent: 6230650 (2001-05-01), Yamazaki
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6255207 (2001-07-01), Jang
patent: 6313010 (2001-11-01), Nag et al.
patent: 6326064 (2001-12-01), Denison et al.
patent: 6335288 (2002-01-01), Kwan et al.
patent: 6346302 (2002-02-01), Kishimoto et al.
patent: 6372291 (2002-04-01), Hua et al.
patent: 6376391 (2002-04-01), Olson et al.
patent: 6383896 (2002-05-01), Kirimura et al.
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 6413871 (2002-07-01), M'Saad et al.
patent: 6413886 (2002-07-01), Kersch et al.
patent: 6416823 (2002-07-01), Li et al.
patent: 6465044 (2002-10-01), Jain et al.
patent: 6486437 (2002-11-01), Tanabe
patent: 6486487 (2002-11-01), Tanabe
patent: 6503843 (2003-01-01), Xia et al.
patent: 6531193 (2003-03-01), Fonash et al.
patent: 6537929 (2003-03-01), Cheung et al.
patent: 6551940 (2003-04-01), Ko
patent: 6559026 (2003-05-01), Rossman et al.
patent: 6589610 (2003-07-01), Li et al.
patent: 6589611 (2003-07-01), Li et al.
patent: 6596653 (2003-07-01), Tan et al.
patent: 6596654 (2003-07-01), Bayman et al.
patent: 6607983 (2003-08-01), Chun et al.
patent: 6626188 (2003-09-01), Fitzsimmons et al.
patent: 6652924 (2003-11-01), Sherman
patent: 6653203 (2003-11-01), Huang et al.
patent: 6673722 (2004-01-01), Yamazaki
patent: 6713390 (2004-03-01), M'Saad et al.
patent: 6740601 (2004-05-01), Tan et al.
patent: 6794290 (2004-09-01), Papasouliotis et al.
patent: 6808748 (2004-10-01), Kapoor et al.
patent: 6812153 (2004-11-01), Hua et al.
patent: 6903031 (2005-06-01), Karim et al.
patent: 2001/0028924 (2001-10-01), Sherman
patent: 2001/0033900 (2001-10-01), M'Saad et al.
patent: 2002/0187655 (2002-12-01), Tan
patent: 2002/0192396 (2002-12-01), Wang et al.
patent: 2003/0056900 (2003-03-01), Li et al.
patent: 2003/0159656 (2003-08-01), Tan et al.
patent: 2003/0203637 (2003-10-01), Hua et al.
patent: 2003/0219540 (2003-11-01), Law et al.
patent: 2004/0146661 (2004-07-01), Kapoor et al.
patent: 2004/0166694 (2004-08-01), Won et al.
patent: 2004/0241342 (2004-12-01), Karim et al.
patent: 2005/0008790 (2005-01-01), Bikram et al.
patent: 2005/0124166 (2005-06-01), Krishnaraj et al.
patent: 0 883 166 (1998-09-01), None
patent: 2 267 291 (1993-12-01), None
patent: 2058836 (1990-02-01), None
patent: 7-161703 (1995-06-01), None
Abraham, “Reactive Facet Tapering of Plasma Oxide For Multilevel Interconnect Applications,” VMIC Conference. pp. 115-121 (1987).
Lee et al., “Dielectric Planarization Techniques For Narrow Pitch Multilevel Interconnects,” VMIC Conference, pp. 85-92 (1987).
Musaka, “Single Step Gap Filling Technology fo Subhalf Micron Metal Spacings on Plasma Enhanced TEOS/O2 Chemical Vapor Deposition System,” International Conference on Solid State Devices and Materials pp. 510-512, held in Japan, (1993).
Nalwa, H.S., Handbook of Low and High Dielectric Constant Materials and Their Applications, vol. 1, p. 66 (1999.
Nguyen, s.v., “High-Density Plasma Chemical Vapor Deposition of Silicon-Based Dielectric Films for Integrated Circuits,” Journal of Research and Development, vol. 43, 1/2 (1999).
Qian et al., “High Density Plasma Deposition and Deep Submicron Gap Fill with Low Dielectric Constant SiOF Films,” DUMIC Conference, pp. 50-56, held in California (1995).
Vassilieuv et al., “Trends in void-free pre-metal CVD dielectrics,”Solid State Technology, 2001, pp. 129-136, www.solid-state.com.
Alonso, J.C. et al., “High rate-low temperature deposition of silicon dioxide films . . . ” JVST A 13(6) Nov./Dec. 1995, pp. 2924-2929.
Bar-lian et al., “A comparative study of sub-micron gap filling and pla
Byun Jeong Soo
Karim M. Ziaul
Li DongQing
Pham Thanh N.
Anya Igwe U.
Applied Materials
Baumeister B. William
Townsend & Townsend & Crew LLP
LandOfFree
In-situ-etch-assisted HDP deposition using SiF 4 does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with In-situ-etch-assisted HDP deposition using SiF 4, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In-situ-etch-assisted HDP deposition using SiF 4 will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3621345