Strained silicon PMOS having silicon germanium source/drain...

Details Strained silicon PMOS having silicon germanium source/drain... Strained silicon PMOS having silicon germanium source/drain...

2006-07-04

2006-07-04

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S933000

Reexamination Certificate

active

07071065

ABSTRACT:
A strained silicon p-type MOSFET utilizes a strained silicon channel region formed on a silicon germanium substrate. Silicon germanium regions are formed on the silicon germanium layer adjacent to ends of the strained silicon channel region, and shallow source and drain extensions are implanted in the silicon germanium material. The shallow source and drain extensions do not extend into the strained silicon channel region. By forming the source and drain extensions in silicon germanium material rather than in silicon, source and drain extension distortions caused by the enhanced diffusion rate of boron in silicon are avoided.

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