Semiconductor device having metal-insulator-metal capacitor...

Details Semiconductor device having metal-insulator-metal capacitor... Semiconductor device having metal-insulator-metal capacitor...

2006-03-07

2006-03-07

Kennedy, Jennifer (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S240000

Reexamination Certificate

active

07008841

ABSTRACT:
In a semiconductor device including a metal-insulator-metal (MIM) capacitor and a method for fabricating the same, a first metal layer and a dielectric film are sequentially formed on an insulating layer. The dielectric film is patterned, wherein a remaining portion is incorporated into the MIM capacitor, and a second metal layer is formed on the patterned dielectric film and the first metal layer. The second metal layer, the patterned dielectric film, and the first metal layer are patterned at one time. Interconnects are formed by stacking the first and the second metal layers when forming the MIM capacitor, which includes a lower electrode formed of the first metal layer, the dielectric film, and an upper electrode formed of the second metal layer.

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patent: 1020020025317 (2002-04-01), None
patent: 1020030049564 (2003-06-01), None

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