Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-21
2006-03-21
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S295000, C257S304000, C257S305000, C257S310000, C438S253000, C438S256000, C438S396000, C438S399000
Reexamination Certificate
active
07015533
ABSTRACT:
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.
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Basceri Cem
Derderian Garo J.
Diaz José R.
Micro)n Technology, Inc.
Wells St. John P.S.
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