Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-31
2006-01-31
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S278000
Reexamination Certificate
active
06991988
ABSTRACT:
Static pass transistor logic having transistors with multiple vertical gates are described. Multiple vertical gates are edge defined with only a single transistor being required for multiple logic inputs. Thus a minimal surface area is required for each logic input. The static pass transistor includes a transistor which has a horizontal depletion mode channel region between a single source and drain region. A number of vertical gates are located above different portions of the depletion mode channel region. A vertical gate is located above a first portion of the depletion mode channel region and is separated therefrom by a first insulator material. A vertical gate is located above a second portion of the channel region and is separated therefrom by a second insulator material. There is no source nor drain region associated with each input and the gates have sub-lithographic horizontal dimensions by virtue of being edge defined vertical gates.
REFERENCES:
patent: 4051354 (1977-09-01), Choate
patent: 4454524 (1984-06-01), Spence
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 4859623 (1989-08-01), Busta
patent: 4893170 (1990-01-01), Tokuda et al.
patent: 4962327 (1990-10-01), Iwazaki
patent: 5126596 (1992-06-01), Millman
patent: 5149664 (1992-09-01), Shin et al.
patent: 5157471 (1992-10-01), Kojima et al.
patent: 5250835 (1993-10-01), Izawa
patent: 5315151 (1994-05-01), Hsieh et al.
patent: 5327380 (1994-07-01), Kersh, III et al.
patent: 5386132 (1995-01-01), Wong
patent: 5446304 (1995-08-01), Sameshima et al.
patent: 5583360 (1996-12-01), Ruth et al.
patent: 5658808 (1997-08-01), Lin
patent: 5661055 (1997-08-01), Hsu et al.
patent: 5759920 (1998-06-01), Burns, Jr. et al.
patent: 5837573 (1998-11-01), Guo
patent: 5847425 (1998-12-01), Yuan et al.
patent: 5898322 (1999-04-01), Kubota et al.
patent: 5910912 (1999-06-01), Hsu et al.
patent: 5991225 (1999-11-01), Forbes et al.
patent: 6177811 (2001-01-01), Fuse et al.
patent: 6219299 (2001-04-01), Forbes et al.
patent: 6373291 (2002-04-01), Hamada et al.
patent: 6448615 (2002-09-01), Forbes et al.
patent: 0444712 (1991-09-01), None
patent: 649174 (1995-04-01), None
patent: 5160411 (1993-06-01), None
patent: WO-86/05935 (1986-10-01), None
“Frequently-Asked Questions (FAQ) About Programmable Logic”,OptiMagic, Inc., http://www.optimagic.com/faq.html,(1997),pp. 1-18.
Bernstein, K. , et al., “High-Speed Design Styles Leverage IBM Technology Prowess”,MicroNews, 4(3), (1998),pp. 1-7.
Chen, W. , et al., “Very uniform and high aspect ratio anisotrophy SIO2 etching process in magnetic neutral loop discharge plasma”,J. Vac. Sci. Technol. A, 17(5), (1999),pp. 2546-2550.
Cheng, K. , et al., “A 1.2V CMOS Multiplier Using Low-Power Current-Sensing Complementary Pass-Transistor Logic”,Proc. Third Int. Conf. on Electrics, Circuits and Systems, (1996),pp. 1037-1040.
Dipert, Brian , “Flash Memory Goes Mainstream”,IEEE Spectrum, 30(10), (Oct. 1993),48-52.
Fuse, T. , et al., “A 0.5V 200MHz 1-Stage 32b ALU Using a Body Bias Controlled SOI Pass-Gate Logic”,1997 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, (1997),286-287.
Glasser, L A.,The Design and Analysis of VLSI Circuits, Addison-Wesley Publishing Company,(1985),pp. 16-21.
Hodges, D. A.,Analysis and Design of Digital Integrated Circuits, 2nd Edition, McGraw-Hill Publishing. New York,(1988),pp. 354-357.
Hodges, D. A., et al.,Analysis and Design of Digital Integrated Circuits, McGraw-Hill Book Company, 2nd Edition,(1988),394-396.
Johnson, J. , et al., “IBM's 0.5 micrometer Embedded Flash Memory Technology”,MicroNews, 4(3), http://www.chips.ibm.com/micronews/vol14—no3/flash.html,(1998),pp. 1-7.
Kayed, S. I., et al., “CMOS Differential Pass-Transistor Logic (CMOS DPTL) Predischarge Buffer Design”,Proceedings of the Thirteenth National Radio Science Conference, Cairo, Egypt,(1996),pp. 527-235.
Landheer, D. , et al., “Formation of high-quality silicon dioxide films by electron cyclotron resonance plasma oxidation and plasma-enhanced chemical vapour deposition”,Thin Solid Films, 293, (1997),pp. 52-62.
Moore, Will R., “A Review of Fault-Tolerant Techniques for the Enhancement of Integrated Ccircuit Yield”,Proceedings fo the IEEE, 74(5), (May 1986),684-698.
Nozawa, R. , et al., “Low temperature polycrystalline silicon film formation with and without charged species in an electron cyclotron resonance SiH4/H2 plasma-enhanced chemical vapor deposition”,J. Vac. Sci. Technol. A, 17(5), (1999),pp. 2542-2545.
Oklobdzija, V. G., “Differential and pass-transistor CMOS logic for high performance systems”,Microelectronics Journal, 29, (1998),pp. 679-688.
Patel, P. , et al., “Low temperature VUV enhanced growth of thin silicon dioxide films”,Applied Surface Science, 46, (1990),pp. 352-356.
Rabaey, J. M.,Digital Integrated Circuits—A Design Perspective, Prenctice Hall,(1996),pp. 210-222.
Rueger, N. R., et al., “Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma”,J. Vac. Sci. Technol. A, 17(5), (1999),pp. 2492-2502.
Shindo, W. , et al., “Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor disposition using SiH4/Xe”,J. Vac. Sci. Technol. A, 17(5), (1999),pp. 3134-3138.
Tretz, C. , et al., “Performance Comparison of Differential Static CMOS Circuit Topologies in SOI Technology”,Proceedings 1998 IEEE International SOI Conference, (1998),pp. 123-124.
Usami, K. , et al., “Thin Si Oxide films for MIS tunnel emitter by hollow cathode enhanced plasma”,Thin Films, 281-282, (1996),pp. 412-414.
Vallon, S. , et al., “Polysilicon-germanium gate patterning studies in a high density plasma helicon source”,J. Vac. Sci. Technol. A, 15(4), (1997),pp. 1874-1880.
Yamashita, S. , et al., “Pass-Transistor/CMOS Collaborated Logic: The Best of Both Worlds”,1997 Symposium on VLSI Circuits Digest of Technical Papers, (1997),pp. 31-32.
Yano, K. , et al., “Top-Down Pass-Transistor Logic Design”,IEEE Journal of Solid-State Circuits, 31(6), (1996),pp. 792-803.
Zimmermann, R. , et al., “Low-Power Logic Styles: CMOS Versus Pass-Transistor Logic”,IEEE Journal of Solid-State Circuits, 32(7), (1997),pp. 1079-1090.
Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Static pass transistor logic with transistors with multiple... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Static pass transistor logic with transistors with multiple..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static pass transistor logic with transistors with multiple... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3581965