Methods of forming a gate stack that is void of silicon...

Details Methods of forming a gate stack that is void of silicon... Methods of forming a gate stack that is void of silicon...

2006-05-09

2006-05-09

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S303000, C438S586000, C438S587000, C438S588000, C438S592000

Reexamination Certificate

active

07041548

ABSTRACT:
A method for forming a gate stack which minimizes or eliminates damage to the gate dielectric layer and/or silicon substrate during the gate stack formation by the reduction of the temperature during formation. The temperature reduction prevents the formation of silicon clusters within the metallic silicide film in the gate stack which has been found to cause damage during the gate etch step. The present invention also includes methods for dispersing silicon clusters prior to the gate etch step.

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