Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-04-04
2006-04-04
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C438S697000, C438S698000
Reexamination Certificate
active
07022608
ABSTRACT:
A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.
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Li Shijian
Sun Lizhong
Tsai Stan
Applied Materials Inc.
Norton Nadine G.
Patterson & Sheridan
Tran Binh X.
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