Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-14
2005-06-14
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
06905955
ABSTRACT:
The invention includes a method of forming a plurality of nanostructures associated with a semiconductor substrate. A semiconductor substrate is exposed to a molecule which self-assembles into ordered domains on the substrate to form a layer over the substrate. A component of the molecule is removed from the layer to form openings extending into the layer. A conductive material is formed within the openings.
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patent: 4001050 (1977-01-01), Koo
patent: 6753250 (2004-06-01), Hill et al.
Park et al., “Block Copoloymer Lithography: Periodic Arrays of—10″ Holes in 1 Square Centimeter”, Science, vol. 276, May 30, 1997, pp. 1401-1404.
Basceri Cem
Derderian Garo J.
Blum David S.
Micro)n Technology, Inc.
Wells St. John P.S.
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